? 2007 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gsm transient 30 v i d25 t c = 25 c * 76 a i dm t c = 25 c, pulse width limited by t jm 170 a i as t c = 25 c 8 a e as t c = 25 c 1.5 j p d t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c plastic body for 10seconds 260 c m d mounting torque to-220,to-3p,to247 1.13 / 10 nm/lb.in. f c mounting force to-262,to-263 10..65 / 2.2..14.6 n/lb. weight to-262,to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ . max. bv dss v gs = 0v, i d = 1ma 250 v v gs = 0v, i d = 10a 300 v gs(th) v ds = v gs , i d = 1ma 3 5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 2 a v gs = 0v t j = 125 c 200 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 39 m trench gate power mosfet n-channel enhancement mode features z international standard packages z avalanche rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density v dss = 250v i d25 = 76a r ds(on) 39m ds99663c(10/07) ixta76n25t IXTH76N25T ixti76n25t ixtp76n25t ixtq76n25t typical avalanche bv = 300v applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z uninterruptible power supplies z high speed power switching applications to-3p (ixtq) g d s (tab) to-263 (i xta ) g s (tab) g d s (tab) to-247 (i xth ) g d s (tab) to-262 (i xti ) to-220 (i xtp ) g (tab) d s preliminary technical information free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. ixta76n25t IXTH76N25T ixti76n25t ixtp76n25t ixtq76n25t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 43 72 s c iss 4500 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 480 pf c rss 46 pf t d(on) 22 ns t r 25 ns t d(off) 56 ns t f 29 ns q g(on) 92 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 28 nc q gd 21 nc r thjc 0.27 c /w r thch to-220 0.50 c w to-3p, to-247 0.21 c w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 76 a i sm repetitive, pulse width limited by t jm 200 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 148 ns i rm 21 a q rm 1.6 c notes: 1: pulse test, t 300 s; duty cycle, d 2%. * : current may be limited by external lead limit. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) i f = 38a, -di/dt = 250a/ s v r = 100v, v gs = 0v free datasheet http:///
? 2007 ixys corporation, all rights reserved ixta76n25t IXTH76N25T ixti76n25t ixtp76n25t ixtq76n25t to-263 (ixta) outline to-3p (ixtq) outline e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain leaded 262 (ixti) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. ixta76n25t IXTH76N25T ixti76n25t ixtp76n25t ixtq76n25t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 01234567 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 38a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 76a i d = 38a fig. 5. r ds(on) normalized to i d = 38a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 0 20 40 60 80 100 120 140 160 180 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes free datasheet http:///
? 2007 ixys corporation, all rights reserved ixta76n25t IXTH76N25T ixti76n25t ixtp76n25t ixtq76n25t fig. 7. input admittance 0 20 40 60 80 100 120 140 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = 125v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. ixta76n25t IXTH76N25T ixti76n25t ixtp76n25t ixtq76n25t fig. 14. resistive turn-on rise time vs. drain current 8 10 12 14 16 18 20 22 24 26 28 30 32 34 15 20 25 30 35 40 45 50 55 60 65 70 75 80 i d - amperes t r - nanoseconds r g = 3.3 v gs = 15v v ds = 125v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 10 12 14 16 18 20 22 24 26 28 30 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t r - nanoseconds 20 21 22 23 24 25 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 76a i d = 38a i d = 38a fig. 16. resistive turn-off switching times vs. junction temperature 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 44 47 50 53 56 59 62 65 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 15v v ds = 125v i d = 38a i d = 76a fig. 17. resistive turn-off switching times vs. drain current 12 14 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 55 60 65 70 75 80 i d - amperes t f - nanoseconds 43 46 49 52 55 58 61 64 67 70 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 15v v ds = 125v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 18. resistive turn-off switching times vs. gate resistance 10 20 30 40 50 60 70 80 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f - nanoseconds 50 70 90 110 130 150 170 190 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 38a, 76a fig. 13. resistive turn-on rise time vs. junction temperature 10 12 14 16 18 20 22 24 26 28 30 32 34 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 v gs = 15v v ds = 125v i d = 38a i d = 76a ixys ref: t_76n25t(6e)06-28-06 free datasheet http:///
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